1 cmos logic ic ELM7S14B schmitt inverter elm7s 1 4 b - el a b c general description ELM7S14B is cmos schmitt inverter ic. it realizes high speed operation similar to ls-ttl with lower power consumption by cmos features. the inner circuit structure of 3-stage logic gate obtains wider noise immunity and constant output. features application selection guide ELM7S14B-el symbol a function 14: schmitt inverter b product version b c taping direction el: refer to pkg file maximum absolute ratings parameter symbol limit unit power supply voltage vdd -0.5 to +7.0 v input voltage vin -0.5 to vdd+0.5 v output voltage vout -0.5 to vdd+0.5 v input protection diode current iik 20 ma output parasitic diode current iok 20 ma output current iout 25 ma vdd/gnd current idd, ignd 25 ma power dissipation pd 200 mw storage temperature tstg -65 to +150 c ? cell phones ? digital cameras ? portable electrical appliances like pda, etc. ? computers and peripherals ? digital electrical appliances like lcd tv sets, dvd recorders/players, stb, etc. ? modi?cation inside print board, adjustment of timing, solution to noise ? same electrical characteristic as 74hc series (output current is around 1/2 of 74hc series) ? low voltage operation : idd=1.0a(max.)(top=25 c) ? wide power voltage range : 2.0v to 6.0v ? high speed : tpd=5ns(typ.)(vdd=5.0v) ? symmetrical output impedance : | ioh |=iol=2ma(min.)(vdd=4.5v) ? small package : sot-25 3 -
2 pin con?guration sot-25(top view) ac electrical characteristics cl=15pf, tr=tf=6ns, vdd=5v cl=50pf, tr=tf=6ns suggested operating condition parameter symbol limit unit power voltage vdd 2.0 to 6.0 v input voltage vin 0 to vdd v output voltage vout 0 to vdd v operating temperature top -40 to +85 c high-input down-time tr, tf vdd=2.0v 0 to 1000 ns vdd=4.5v 0 to 500 vdd=6.0v 0 to 400 * cpd is ic's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit. averaged operating current consumption at non load is calculated as following formula: idd(opr)=cpd ? vdd ? fin+idd pin no. pin name 1 nc 2 iny 3 gnd 4 outx 5 vdd input output iny outx low high high low cmos logic ic ELM7S14B schmitt inverter parameter sym. top=25c unit condition min. typ. max. output transition time ttlh 5 10 ns refer to test circuit tthl 5 10 propagation delay-time tplh 7 15 ns refer to test circuit tphl 7 15 parameter sym. vdd top=25c top=-40 to +85c unit condition min. typ. max. min. max. output transition time ttlh 2.0 50 125 155 ns refer to test circuit 4.5 14 25 31 6.0 12 21 26 tthl 2.0 50 125 155 ns 4.5 14 25 31 6.0 12 21 26 propagation delay-time tplh 2.0 48 100 125 ns refer to test circuit 4.5 12 20 25 6.0 9 17 21 tphl 2.0 48 100 125 ns 4.5 12 20 25 6.0 9 17 21 input capacity cin 5 10 10 pf equivalent inner capacity cpd 10 pf 3 - 1 2 3 5 4
3 dc electrical characteristics test circuit measured wave pattern marking a b c * output should be opened when measuring current consumption. sot-25 sym. mark content a e elm7s series b a ELM7S14B c a to z (except i, o, x) lot no. cmos logic ic ELM7S14B schmitt inverter parameter sym. vdd top=25c top=-40 to +85c unit condition min. typ. max. min. max. threshold voltage v t + 2.0 1.50 1.50 v 4.5 3.15 3.15 6.0 4.20 4.20 v t - 2.0 0.30 0.30 v 4.5 0.90 0.90 6.0 1.20 1.20 hysteresis voltage vh 2.0 0.20 1.20 0.20 1.20 v 4.5 0.40 2.25 0.40 2.25 6.0 0.60 3.00 0.60 3.00 output voltage voh 2.0 1.90 2.00 1.90 v vin= vih or vil ioh=-20a 4.5 4.40 4.50 4.40 6.0 5.90 6.00 5.90 4.5 4.18 4.31 4.13 ioh=-2ma 6.0 5.68 5.80 5.63 ioh=-2.6ma vol 2.0 0.00 0.10 0.10 v vin=vih iol=20a 4.5 0.00 0.10 0.10 6.0 0.00 0.10 0.10 4.5 0.17 0.26 0.33 iol=2ma 6.0 0.18 0.26 0.33 iol=2.6ma input current iin 6.0 -0.1 0.1 -1.0 1.0 a vin=vdd or gnd static current idd 6.0 1.0 10.0 a vin=vdd or gnd 3 - p u l s e o s c i l l a t o r v d d o u t p u t c l i n p u t 5 0 ? t p h l 5 0 % 5 0 % 1 0 % 5 0 % 5 0 % i n p u t t p l h v d d g n d v o h v o l o u t p u t 9 0 % 1 0 % 1 0 % 9 0 % 9 0 % 1 0 % 6 n s 6 n s t t h l t t l h 9 0 %
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